Introduction — High‑Performance IGBT Module for Power Electronics
The ABB 3BHL000396P0001 IGBT Power Module is a rugged, high‑efficiency insulated gate bipolar transistor designed for medium‑ to high‑power applications. Engineered with advanced semiconductor technology, this module supports fast switching, low conduction losses, and excellent thermal performance — making it ideal for demanding industrial drives, renewable energy converters, and traction systems. Built for reliability and long service life, it offers robust electrical characteristics and a compact footprint, delivering dependable performance across diverse power control environments.
Technical Specifications — Performance & Physical Profile
| Specification | Description |
|---|---|
| Module Type | IGBT Power Module |
| Model / Part Number | 3BHL000396P0001 |
| Configuration | Dual IGBT with integrated free‑wheeling diodes |
| Voltage Rating | 1200 V DC |
| Current Rating | 300 A typical |
| Switching Frequency | Up to 20 kHz (application dependent) |
| Package Type | Press‑packed power module |
| Thermal Resistance | Low thermal resistance for efficient heat dissipation |
| Mounting Style | Baseplate compatible, standard power module footprint |
| Operating Temperature Range | –40 °C to +125 °C (junction) |
| Dimensions | 140 mm × 58 mm × 25 mm |
| Weight | ~0.68 kg |
| Cooling Method | Baseplate cooling (liquid or forced air recommended) |
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